Improved luminescence efficiency of InAs quantum dots grown on atomic terraced GaAs surface prepared with in-situ chemical etching

摘要

Observation of the enhanced luminescence efficiency of InAs quantum dots (QDs) grown on atomically controlled GaAs surfaces is reported. With the trisdimethylaminoarsenic (TDMAAs) in-situ surface etching process, formation of atomic steps and terraces on GaAs surfaces were clearly observed. InAs QDs grown on the processed GaAs surfaces showed the clear dependence of QDs size, density and optical characteristics on the surface properties, i.e., the increase of the QDs height and diameter the decrease of the QDs density. About 6-times enhancement of photoluminescence efficiency which has the peak around 1550-nm wavelength was observed by growing InAs QDs on atomically controlled GaAs surfaces. This is due to the migration enhancement of InAs during thegrowth the QDs. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)